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Paterson, G.W. , Holland, M.C., Bentley, S.J., Thayne, I.G. and Long, A.R. (2011) Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond. Journal of Applied Physics, 109(12), p. 124112. (doi: 10.1063/1.3599895)

Martinez, A., Kalna, K., Sushko, P.V., Shluger, A.L., Barker, J.R. and Asenov, A. (2009) Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study. IEEE Transactions on Nanotechnology, 8(2), pp. 159-166. (doi: 10.1109/TNANO.2008.917776)

Paterson, G.W. , Longo, P., Wilson, J.A., Craven, A.J., Long, A.R., Thayne, I.G., Passlack, M. and Droopad, R. (2008) Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures. Journal of Applied Physics, 104(10), p. 103719. (doi: 10.1063/1.3029661)

Scott, J. , Thomas, P.J., MacKenzie, M., McFadzean, S., Wilbrink, J., Craven, A.J. and Nicholson, W.A.P. (2008) Near-simultaneous dual energy range EELS spectrum imaging. Ultramicroscopy, 108(12), pp. 1586-1594. (doi: 10.1016/j.ultramic.2008.05.006)

Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm. IEEE Electron Device Letters, 28(12), pp. 1080-1082. (doi: 10.1109/LED.2007.910009)

Holland, M., Stanley, C.R., Reid, W., Thayne, I. , Paterson, G.W. , Long, A.R., Longo, P., Scott, J. , Craven, A.J. and Gregory, R. (2007) GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), pp. 1024-1028. (doi: 10.1116/1.2738480)

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), Washington DC, USA, 10-12 December 2007, pp. 621-624. ISBN 9781424415083 (doi: 10.1109/IEDM.2007.4419016)

Kalna, K., Wilson, J.A., Moran, D.A.J., Hill, R.J.W., Long, A.R., Droopad, R., Passlack, M., Thayne, I.G. and Asenov, A. (2007) Monte Carlo simulations of high-performance implant free In0.3Ga0.7 nano-MOSFETs for low-power CMOS applications. IEEE Transactions on Nanotechnology, 6(1), pp. 106-112. (doi: 10.1109/TNANO.2006.888543)

Moran, D.A.J. et al. (2007) Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs. In: 37th European Solid State Device Research Conference (ESSDERC 2007), Munich, Germany, 11-13 September 2007, pp. 466-469. ISBN 9781424411245 (doi: 10.1109/ESSDERC.2007.4430979)

Scott, J. , Docherty, F.T., MacKenzie, M., Smith, W., Miller, B., Collins, C.L. and Craven, A.J. (2006) Sample preparation for nanoanalytical electron microscopy using the FIB lift-out method and low energy ion milling. Journal of Physics: Conference Series, 26(1), pp. 223-226. (doi: 10.1088/1742-6596/26/1/053)

Thomas, P., Scott, J. , MacKenzie, M., McFadzean, S., Wilbrink, J. and Craven, A. (2006) Near-simultaneous core- and low-loss EELS spectrum-imaging in the STEM using a fast beam switch. Microscopy and Microanalysis, 12(S02), pp. 1362-1363. (doi: 10.1017/S1431927606065512)

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