Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm

Hill, R.J.W. et al. (2007) Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm. IEEE Electron Device Letters, 28(12), pp. 1080-1082. (doi: 10.1109/LED.2007.910009)

Abstract

We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date. The devices employ a GaGdO high-k (k = 20) gate stack, a Pt gate, and a delta-doped InGaAs/AlGaAs/GaAs hetero-structure. Typical 1-mum gate length device figures of merit are given as follows: saturation drive current, Id,sat = 407 muA/mum; threshold voltage, Vt = +0.26 V; maximum extrinsic transconductance, gm = 477 muS/mum (the highest reported to date for a III-V MOSFET); gate leakage current, Ig = 30 pA; subthreshold swing, S = 102 mV/dec; on resistance, Ron = 1920 Omega-mum; Ion/Ioff ratio = 6.3 x 104; and output conductance, gd = 11 mS/mm. A peak electron mobility of 5230 cm2/V. s was extracted from low-drain-bias measurements of 20 mum long-channel devices, which, to the authors' best knowledge, is the highest mobility extracted from any e-mode MOSFET. These transport and device data are highly encouraging for future high-performance n-channel complementary metal-oxide-semiconductor solutions based on III-V MOSFETs.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Zhou, Dr Haiping and Thayne, Prof Iain and Moran, Professor David and Li, Dr Xu and Macintyre, Dr Douglas and Asenov, Professor Asen
• Authors: Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Asenov, A., Zurcher, P., Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M., and Thayne, I.G.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; University Centres > Glasgow Materials Research Initiative
• Journal Name: IEEE Electron Device Letters
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0741-3106
• ISSN (Online): 1558-0563
• Copyright Holders: Copyright © 2007 IEEE
• First Published: First published in IEEE Electron Device Letters 28(12):1080-1082
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
35857	3	Sub 100nm 111-V MOSFET's for Digital Applications	Iain Thayne	Engineering & Physical Sciences Research Council (EPSRC)	GR/S61218/01	Electronic and Nanoscale Engineering
45248	1	Silicon compatible process modules for III-V electronic devices.	Iain Thayne	Engineering & Physical Sciences Research Council (EPSRC)	EP/F002610/1	Electronic and Nanoscale Engineering