High mobility III-V MOSFETs for RF and digital applications

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), Washington DC, USA, 10-12 December 2007, pp. 621-624. ISBN 9781424415083 (doi: 10.1109/IEDM.2007.4419016)

Abstract

Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially suitable for RF power amplification, switching, and front-end integration in mobile and wireless applications while MOSFETs with high indium content channels are of interest for future CMOS applications.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Zhou, Dr Haiping and Thayne, Prof Iain and Thoms, Dr Stephen and Moran, Professor David and Li, Dr Xu and Macintyre, Dr Douglas and Asenov, Professor Asen and Kalna, Dr Karol
• Authors: Passlack, M., Zurcher, P., Rajagopalan, K., Droopad, R., Abrokwah, J., Tutt, M., Park, Y.-B., Johnson, E., Hartin, O., Zlotnicka, A., Fejes, P., Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Asenov, A., Kalna, K., and Thayne, I.G.
• Subjects: T Technology > T Technology (General)
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; University Centres > Glasgow Materials Research Initiative
• Publisher: IEEE
• ISBN: 9781424415083
• Copyright Holders: Copyright © 2007 IEEE
• First Published: First published in IEEE International Electron Devices Meeting (IEDM 2007)
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
35857	3	Sub 100nm 111-V MOSFET's for Digital Applications	Iain Thayne	Engineering & Physical Sciences Research Council (EPSRC)	GR/S61218/01	Electronic and Nanoscale Engineering