Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications

Kalna, K., Wilson, J.A., Moran, D.A.J., Hill, R.J.W., Long, A.R., Droopad, R., Passlack, M., Thayne, I.G. and Asenov, A. (2007) Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications. IEEE Transactions on Nanotechnology, 6(1), pp. 106-112. (doi: 10.1109/TNANO.2006.888543)

Abstract

No abstract available.

• Item Type: Articles
• Keywords: InGaAs nano-MOSFETs, Monte Carlo simulation, high performance, implant free
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Moran, Professor David and Asenov, Professor Asen and Kalna, Dr Karol
• Authors: Kalna, K., Wilson, J.A., Moran, D.A.J., Hill, R.J.W., Long, A.R., Droopad, R., Passlack, M., Thayne, I.G., and Asenov, A.
• Subjects: T Technology > T Technology (General)
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; University Centres > Glasgow Materials Research Initiative
• Journal Name: IEEE Transactions on Nanotechnology
• Publisher: IEEE
• ISSN: 1536-125X
• ISSN (Online): 1941-0085
• Published Online: 15 January 2007
• Copyright Holders: Copyright © 2007 Institute of Electrical and Electronics Engineers (IEEE)
• First Published: First published in IEEE Transactions on Nanotechnology 6(6):106-112
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
29209	1	metamorphic GaAs HEMTs for High Bandwidth Wireless Communication Applications	Iain Thayne	Engineering & Physical Sciences Research Council (EPSRC)	GR/A10994/01	Electronic and Nanoscale Engineering
35857	3	Sub 100nm 111-V MOSFET's for Digital Applications	Iain Thayne	Engineering & Physical Sciences Research Council (EPSRC)	GR/S61218/01	Electronic and Nanoscale Engineering