Holland, M., Stanley, C.R., Reid, W., Thayne, I. , Paterson, G.W. , Long, A.R., Longo, P., Scott, J. , Craven, A.J. and Gregory, R. (2007) GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), pp. 1024-1028. (doi: 10.1116/1.2738480)
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Publisher's URL: http://dx.doi.org/10.1116/1.2738480
Abstract
Gd<sub><i>x</i></sub>Ga<sub>0.4-<i>x</i></sub>O<sub>0.6</sub>/Ga<sub>2</sub>O<sub>3</sub>dielectric stacks have been grown on (001)GaAs to form a III-V/oxide with a low interface state density and a high conduction band offset. Photoluminescence is used to compare the stacks with low interface state density Ga<sub>2</sub>O<sub>3</sub>-GaAs layers. Rutherford backscattering and electron energy loss spectroscopy are used to investigate the Gd compositional variation with depth and this is related to the interface state density. The effect of Gd flux and atomic oxygen on the growth rate is reported. The leakage current through Gd<sub><i>x</i></sub>Ga<sub>0.4-<i>x</i></sub>O<sub>0.6</sub>/Ga<sub>2</sub>O<sub>3</sub> stacks is compared with ones using only Ga<sub>2</sub>O<sub>3</sub> as the oxide.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Scott, Dr Jamie and Thayne, Prof Iain and Stanley, Professor Colin and Reid, Mr William and Longo, Dr Paolo and Long, Professor Andrew and Craven, Professor Alan and Paterson, Dr Gary and Holland, Dr Martin |
| Authors: | Holland, M., Stanley, C.R., Reid, W., Thayne, I., Paterson, G.W., Long, A.R., Longo, P., Scott, J., Craven, A.J., and Gregory, R. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy University Centres > Glasgow Materials Research Initiative |
| Journal Name: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Publisher: | American Institute of Physics |
| ISSN: | 1071-1023 |
| ISSN (Online): | 1520-8567 |
| Published Online: | 31 May 2007 |
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