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Markov, S., Cheng, B. and Asenov, A. (2012) Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions. IEEE Electron Device Letters, 33(3), pp. 315-317. (doi: 10.1109/LED.2011.2179114)

Markov, S., Wang, X., Moezi, N. and Asenov, A. (2011) Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions. IEEE Transactions on Electron Devices, 58(8), pp. 2385-2393. (doi: 10.1109/TED.2011.2152845)

Wang, X., Roy, S., Brown, A.R. and Asenov, A. (2011) Impact of STI on statistical variability and reliability of decananometer MOSFETs. IEEE Electron Device Letters, 32(4), pp. 479-481. (doi: 10.1109/LED.2011.2108256)

Kovac, U., Alexander, C., Roy, G., Riddet, C., Cheng, B.J. and Asenov, A. (2010) Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models. IEEE Transactions on Electron Devices, 57(10), pp. 2418-2426. (doi: 10.1109/TED.2010.2062517)

Azam, T., Cheng, B., Roy, S. and Cumming, D.R.S. (2010) Robust asymmetric 6T-SRAM cell for low-power operation in nano-CMOS technologies. Electronics Letters, 46(4), pp. 273-274. (doi: 10.1049/el.2010.2817)

Cheng, B.J., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S. and Asenov, A. (2010) Statistical-variability compact-modeling strategies for BSIM4 and PSP. IEEE Design and Test of Computers, 27(2), pp. 26-35. (doi: 10.1109/MDT.2010.53)

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2009) Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study. IEEE Transactions on Electron Devices, 56(10), pp. 2255-2263. (doi: 10.1109/TED.2009.2027973)

Alexander, C., Roy, G. and Asenov, A. (2008) Random-dopant-induced drain current variation in Nano-MOSFETs: a three-dimensional self-consistent Monte Carlo simulation study using "ab initio" ionized impurity scattering. IEEE Transactions on Electron Devices, 55(11), pp. 3251-3258. (doi: 10.1109/TED.2008.2004647)

Asenov, A. , Cathignol, A., Cheng, B., McKenna, K. P., Brown, A. R., Shluger, A. L., Chanemougame, D., Rochereau, K. and Ghibaudo, G. (2008) Origin of the asymmetry in the magnitude of the statistical variability of n- and p-channel poly-Si gate bulk MOSFETs. IEEE Electron Device Letters, 29(8), pp. 913-915. (doi: 10.1109/LED.2008.2000843)

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