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Markov, S., Wang, X., Moezi, N. and Asenov, A. (2011) Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions. IEEE Transactions on Electron Devices, 58(8), pp. 2385-2393. (doi: 10.1109/TED.2011.2152845)

Wang, X., Roy, S., Brown, A.R. and Asenov, A. (2011) Impact of STI on statistical variability and reliability of decananometer MOSFETs. IEEE Electron Device Letters, 32(4), pp. 479-481. (doi: 10.1109/LED.2011.2108256)

Kovac, U., Alexander, C., Roy, G., Riddet, C., Cheng, B.J. and Asenov, A. (2010) Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models. IEEE Transactions on Electron Devices, 57(10), pp. 2418-2426. (doi: 10.1109/TED.2010.2062517)

Azam, T., Cheng, B., Roy, S. and Cumming, D.R.S. (2010) Robust asymmetric 6T-SRAM cell for low-power operation in nano-CMOS technologies. Electronics Letters, 46(4), pp. 273-274. (doi: 10.1049/el.2010.2817)

Cheng, B.J., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S. and Asenov, A. (2010) Statistical-variability compact-modeling strategies for BSIM4 and PSP. IEEE Design and Test of Computers, 27(2), pp. 26-35. (doi: 10.1109/MDT.2010.53)

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