Wang, X., Roy, S., Brown, A.R. and Asenov, A. (2011) Impact of STI on statistical variability and reliability of decananometer MOSFETs. IEEE Electron Device Letters, 32(4), pp. 479-481. (doi: 10.1109/LED.2011.2108256)
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Publisher's URL: http://dx.doi.org/10.1109/LED.2011.2108256
Abstract
The impact of shallow trench isolation (STI) on the statistical variability introduced by random discrete dopants and trapped interface charge is clarified for the first time using 3-D statistical numerical simulations. The possible influence of the STI on the p-n junction shape is also taken into account. The simulated test bed devices are contemporary 35-nm gate-length high-performance nMOSFETs typical for the 45-nm technology generation. In transistors with straight junction edges, the STI-related fringing effects increase the equivalent channel width, reducing the statistical variability. Changes in the junction shape in the STI vicinity can further reduce or increase the variability.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Brown, Mr Andrew and Roy, Professor Scott and Wang, Dr Xingsheng and Asenov, Professor Asen |
| Authors: | Wang, X., Roy, S., Brown, A.R., and Asenov, A. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Electron Device Letters |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0741-3106 |
| Published Online: | 03 March 2011 |
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