Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2009) Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study. IEEE Transactions on Electron Devices, 56(10), pp. 2255-2263. (doi: 10.1109/TED.2009.2027973)

Abstract

Using the Glasgow "atomistic" simulator, we have performed 3-D statistical simulations of random-dopant-induced threshold voltage variation in state-of-the-art 35- and 13-nm bulk MOSFETs consisting of statistical samples of 10(5) or more microscopically different transistors. Simulation on such an unprecedented scale has been enabled by grid technology, which allows the distribution and the monitoring of very large ensembles on heterogeneous computational grids, as well as the automated handling of large amounts of output data. The results of these simulations show a pronounced asymmetry in the distribution of the MOSFET threshold voltages, which increases with transistor scaling. A comprehensive statistical analysis enabled by the large sample size reveals the origin of this observed asymmetry, provides a detailed insight into the underlying physical processes, and enables the statistical enhancement of simulations of random-dopant-induced threshold voltage variation

• Item Type: Articles
• Keywords: CMOS, device, devices, engineering, enhancement, impact, intrinsic parameter fluctuations, MOSFET, MOSFETS, numerical simulations, physics, random dopants, simulation, statistical analysis, technologies, technology, threshold, transistor, transistors, variability
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Reid, Mr David and Roy, Dr Gareth and Roy, Professor Scott and Asenov, Professor Asen
• Authors: Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• ISSN (Online): 1557-9646
• Published Online: 18 September 2009

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
42132	1	Meeting the design challenges of the nano CMOS electronics	Asen Asenov	Engineering & Physical Sciences Research Council (EPSRC)	EP/E003125/1	Electronic and Nanoscale Engineering