Impact of the Figures of Merit (FoMs) definitions on the variability in nanowire TFET: NEGF simulation study

Guan, Y., Georgiev, V. P. , Asenov, A. , Liang, F. and Chen, H. (2022) Impact of the Figures of Merit (FoMs) definitions on the variability in nanowire TFET: NEGF simulation study. IEEE Transactions on Electron Devices, 69(11), pp. 6394-6399. (doi: 10.1109/TED.2022.3204596)

Abstract

In this article, we investigate the effect of variability in p-type nanowire tunnel FET (TFET) using quantum mechanical transport simulations. The simulations have been carried out using the Nano Electronics Simulation Software (NESS) from the University of Glasgow. Random discrete dopants (RDDs) and work-function variations (WFV) have been investigated in the simulations. Our statistical simulations reveal that key figures of merit (FoMs) such as the current variability generally decrease as the gate voltage decreases, the threshold voltage variability increases as the threshold current increases, and the dependences of these FoM variabilities on criteria become stronger with the switch characteristic ameliorated. Furthermore, it is interesting to find that the band offset in heterostructure can more or less alleviate the current variability, especially around the OFF-state.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Georgiev, Professor Vihar and Guan, Yunhe and Asenov, Professor Asen
• Authors: Guan, Y., Georgiev, V. P., Asenov, A., Liang, F., and Chen, H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: IEEE
• ISSN: 0018-9383
• ISSN (Online): 1557-9646
• Published Online: 16 September 2022
• Copyright Holders: Copyright © 2022 IEEE
• First Published: First published in IEEE Transactions on Electron Devices 69(11): 6394-6399
• Publisher Policy: Reproduced with the permission of the Publisher

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
302377		Quantum Simulator for Entangled Electronics (QSEE)	Vihar Georgiev	Engineering and Physical Sciences Research Council (EPSRC)	EP/S001131/1	ENG - Electronics & Nanoscale Engineering
173715		Quantum Electronics Device Modelling (QUANTDEVMOD)	Vihar Georgiev	Engineering and Physical Sciences Research Council (EPSRC)	EP/P009972/1	ENG - Electronics & Nanoscale Engineering