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Lapham, P. and Georgiev, V. (2022) Theoretically probing the relationship between barrier length and resistance in Al/AlOx/Al tunnel junctions. Solid-State Electronics, 197, 108442. (doi: 10.1016/j.sse.2022.108442)

Guan, Y., Georgiev, V. P. , Asenov, A. , Liang, F. and Chen, H. (2022) Impact of the Figures of Merit (FoMs) definitions on the variability in nanowire TFET: NEGF simulation study. IEEE Transactions on Electron Devices, 69(11), pp. 6394-6399. (doi: 10.1109/TED.2022.3204596)

Rezaei, A., Maciazek, P., Sengupta, A. , Dutta, T. , Medina-Bailon, C., Asenov, A. and Georgiev, V. P. (2022) Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source. Solid-State Electronics, 194, 108339. (doi: 10.1016/j.sse.2022.108339)

Lapham, P. and Georgiev, V. (2022) Computational study of oxide stoichiometry and variability in the Al/AlOx/Al tunnel junction. Nanotechnology, 33(26), 265201. (doi: 10.1088/1361-6528/ac5f2e) (PMID:35303731)

Medina-Bailon, C., Dutta, T. , Rezaei, A., Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework. Micromachines, 12(6), 680. (doi: 10.3390/mi12060680)

Guan, Y., Carrillo-Nuñez, H., Georgiev, V. P. , Asenov, A. , Liang, F., Li, Z. and Chen, H. (2021) Quantum simulation investigation of work-function variation in nanowire tunnel FETs. Nanotechnology, 32(15), 150001. (doi: 10.1088/1361-6528/abd125) (PMID:33285530)

Lapham, P., Vilà-Nadal, L. , Cronin, L. and Georgiev, V. P. (2021) Influence of the contact geometry and counterions on the current flow and charge transfer in polyoxometalate molecular junctions: a density functional theory study. Journal of Physical Chemistry C, 125(6), pp. 3599-3610. (doi: 10.1021/acs.jpcc.0c11038) (PMID:33633816) (PMCID:PMC7899180)

Medina-Bailon, C., Dutta, T. , Adamu-Lema, F., Rezaei, A., Nagy, D. , Georgiev, V. P. and Asenov, A. (2020) Nano-electronic simulation software (NESS): a novel open-source TCAD simulation environment. Journal of Microelectronic Manufacturing, 3(4), 20030407. (doi: 10.33079/jomm.20030407)

Berrada, S., Carrillo-Nunez, H., Lee, J., Medina Bailon, C., Dutta, T. , Badami, O., Adamu-Lema, F., Thirunavukkarasu, V., Georgiev, V. and Asenov, A. (2020) Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform. Journal of Computational Electronics, 19, pp. 1031-1046. (doi: 10.1007/s10825-020-01519-0)

Carrillo-Nuñez, H., Medina-Bailón, C., Georgiev, V. P. and Asenov, A. (2020) Full-band quantum transport simulation in presence of hole-phonon interactions using a mode-space k·p approach. Nanotechnology, 32(2), 020001. (doi: 10.1088/1361-6528/abacf3) (PMID:32759487)

Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2020) Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation. Micromachines, 11(2), 204. (doi: 10.3390/mi11020204)

This list was generated on Mon Mar 20 23:06:13 2023 GMT.