Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. In: WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022, (Accepted for Publication)
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| Item Type: | Conference Proceedings |
|---|---|
| Additional Information: | The authors wish to thank staff at the James Watt Nanofabrication Centre at the University of Glasgow for their support with this work. This work was supported in part by EPSRC grant no. EP/R024413/1. |
| Status: | Accepted for Publication |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Taking, Dr Sanna and Ofiare, Dr Afesomeh and Al-Khalidi, Dr Abdullah and Karami, Kaivan and Wasige, Professor Edward and Elksne, Maira and Dhongde, Aniket |
| Authors: | Karami, K., Taking, S., Ofiare, A., Elksne, M., Dhongde, A., Al-Khalidi, A., and Wasige, E. |
| College/School: | College of Science and Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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