Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors

Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. In: WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022, (Accepted for Publication)

[img] Text
270672.pdf - Accepted Version
Restricted to Repository staff only

200kB

Item Type:Conference Proceedings
Additional Information:The authors wish to thank staff at the James Watt Nanofabrication Centre at the University of Glasgow for their support with this work. This work was supported in part by EPSRC grant no. EP/R024413/1.
Status:Accepted for Publication
Refereed:Yes
Glasgow Author(s) Enlighten ID:Taking, Dr Sanna and Ofiare, Dr Afesomeh and Al-Khalidi, Dr Abdullah and Karami, Kaivan and Wasige, Professor Edward and Elksne, Maira and Dhongde, Aniket
Authors: Karami, K., Taking, S., Ofiare, A., Elksne, M., Dhongde, A., Al-Khalidi, A., and Wasige, E.
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301178Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient OperationEdward WasigeEngineering and Physical Sciences Research Council (EPSRC)EP/R024413/1ENG - Electronics & Nanoscale Engineering