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Karami, K. , Dhongde, A., Cheng, H., Reynolds, P. M. , Reddy, B. A., Ritter, D., Li, C. , Wasige, E. and Thoms, S. (2023) Robust sub-100 nm T-Gate fabrication process using multi-step development. Micro and Nano Engineering, 19, 100211. (doi: 10.1016/j.mne.2023.100211)

Karami, K. , Hassan, S., Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2023) Comparative Study of Al2O3 and HfO2 as gate dielectric on AlGaN/GaN MOSHEMTs. International Journal of Electronics and Communication Engineering, 17(2), pp. 47-50.

Dhongde, A., Taking, S., Ofiare, A., Karami, K. , Elksne, M., Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Karami, K. , Taking, S., Ofiare, A., Elksne, M. , Dhongde, A., Al-Khalidi, A. and Wasige, E. (2022) Investigation of Al2O3, Si3N4 and SiO2 Used for Surface Passivation and Gate Dielectric on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors. WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island–Azores), 3-6 May 2022.

Dhongde, A., Taking, S., Elksne, M. , Ofiare, A., Karami, K. , Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Dhongde, A., Taking, S., Elksne, M. , Samanta, S. , Ofiare, A., Karami, K. , Al-Khalidi, A. and Wasige, E. (2021) The role of selective pattern etching to improve the Ohmic contact resistance and device performance of AlGaN/GaN HEMTs. International Journal of Nanoelectronics and Materials, 14, pp. 21-28.

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