Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications

Kumar, N. , Dixit, A., Rezaei, A. , Dutta, T. , Pascual García, C. and Georgiev, V. (2023) Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for Memory and Sensing Applications. In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023, pp. 617-620. ISBN 9798350335460 (doi: 10.1109/nmdc57951.2023.10343913)

Abstract

Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.

• Item Type: Conference Proceedings
• Additional Information: This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement no 862539-Electromed-FET OPEN.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Dutta, Dr Tapas and Dixit, Mr Ankit and Rezaei, Dr Ali and Kumar, Dr Naveen and Georgiev, Professor Vihar
• Authors: Kumar, N., Dixit, A., Rezaei, A., Dutta, T., Pascual García, C., and Georgiev, V.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
• Publisher: IEEE
• ISSN: 2473-0718
• ISBN: 9798350335460
• Copyright Holders: Copyright © IEEE 2023
• First Published: First published in 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
305900		Electrochemically-enabled high-throughput peptidomics for next-generation precision medicine	Vihar Georgiev	European Commission (EC)	862539	ENG - Electronics & Nanoscale Engineering