Developing a full 3D NEGF simulator with random dopant and interface roughness

Martinez, A., Barker, J.R., Anantram, A., Svizhenko, A. and Asenov, A. (2006) Developing a full 3D NEGF simulator with random dopant and interface roughness. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, pp. 215-218.

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Item Type:Conference Proceedings
Keywords:Interface, interface roughness, model, random dopant, simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Barker, J.R., Anantram, A., Svizhenko, A., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
379901Statistical 3d simulation of intrinsic parameter fluctuations in decanoneter MOSFETS introduced by discreteness of charge and matterAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)GR/T18271/01Electronic and Nanoscale Engineering