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Riddet, C., Brown, A.R., Alexander, C.L., Watling, J.R., Roy, S. and Asenov, A. (2007) 3-D Monte Carlo simulation of the impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. IEEE Transactions on Nanotechnology, 6, pp. 48-55. (doi: 10.1109/TNANO.2006.886739)
Roy, G., Brown, A.R., Adamu-Lema, F., Roy, S. and Asenov, A. (2006) Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs. IEEE Transactions on Electron Devices, 53(12), pp. 3063-3070. (doi: 10.1109/TED.2006.885683)
Roy, S. (2006) Intrinsic Parameter Fluctuations in Conventional MOSFETs until end of the ITRS. Journal of Physics: Conference Series, 38(1), pp. 188-191. (doi: 10.1088/1742-6596/38/1/045)
Martinez, A., Barker, J.R., Anantram, A., Svizhenko, A. and Asenov, A. (2006) Developing a full 3D NEGF simulator with random dopant and interface roughness. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, pp. 215-218.
Alexander, C., Brown, A., Watling, J. and Asenov, A. (2004) Impact of single charge trapping in nano-MOSFETs. In: IEEE 2004 Silicon Nanoelectronics Workshop, Honolulu,