In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates

Brugnolotto, E., Schmid, H., Georgiev, V. and Sousa, M. (2023) In-plane III-V nanowires on Si (1 1 0) with quantum wells by selective epitaxy in templates. Crystal Growth and Design, 23(11), pp. 8034-8042. (doi: 10.1021/acs.cgd.3c00806)

Abstract

Heterointerfaces and quantum wells were realized in III–V nanowires monolithically grown from a silicon seed inside a silicon oxide template on a silicon-on-insulator wafer. InP, InGaAs, InAs, and GaAs were grown by metal-organic chemical vapor deposition. The yield of nanowires with a well-defined single-facet {1 1 1}B growth front was assessed using scanning electron microscopy, reaching 92.55%. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy analysis revealed good composition control and the formation of sharp single-faceted quantum wells throughout the sample. The robustness of the process was further demonstrated by a forced merger of individual nanowires into one large crystal. In this sample, the quantum wells were as well defined as those in the single-seed nanowires. At the same time, we did not observe the formation of any dislocations at the merge location.

• Item Type: Articles
• Additional Information: This research was carried out as part of the DESIGN-EID project, which has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 860095.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Brugnolotto, Enrico and Georgiev, Professor Vihar
• Authors: Brugnolotto, E., Schmid, H., Georgiev, V., and Sousa, M.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Crystal Growth and Design
• Publisher: American Chemical Society
• ISSN: 1528-7483
• ISSN (Online): 1528-7505
• Published Online: 04 October 2023
• Copyright Holders: Copyright © 2023 The Authors
• First Published: First published in Crystal Growth and Design 23(11):8034-8042
• Publisher Policy: Reproduced under a Creative Commons license