Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

Tetzner, H., Seifert, W., Skibitzki, O., Yamamoto, Y., Lisker, M., Mirza, M.M. , Fischer, I.A., Paul, D.J. , De Seta, M. and Capellini, G. (2023) Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001). Applied Physics Letters, 122(24), 243503. (doi: 10.1063/5.0152962)

Abstract

In this work, we investigate the effective background charge density in intrinsic Si0.06Ge0.94/Ge plastically relaxed heterostructures deposited on Si(001). Hall effect measurements and capacitance–voltage profiling reveal a p-type conductivity in the nominally intrinsic layer with a hole concentration in the mid 1015 cm−3 range at temperatures between 50 and 200 K. In view of the carrier freeze out that we observe below 50 K, we attribute the origin of these carriers to the ionization of shallow acceptor-like defect states above the valence band. In addition, one dominant hole trap located at mid-gap position is found by deep level transient spectroscopy. Carrier trapping kinetics measurements can be interpreted as due to a combination of point defects, likely trapped in the strain field of extended defects, i.e., the threading dislocation.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Mirza, Dr Muhammad M A and Paul, Professor Douglas

Creator Roles

Mirza, M. M. A.: Methodology, Writing – review and editing
Paul, D.: Methodology, Project administration, Writing – review and editing

• Authors: Tetzner, H., Seifert, W., Skibitzki, O., Yamamoto, Y., Lisker, M., Mirza, M.M., Fischer, I.A., Paul, D.J., De Seta, M., and Capellini, G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics Letters
• Publisher: American Institute of Physics
• ISSN: 0003-6951
• ISSN (Online): 1077-3118
• Copyright Holders: Copyright © 2023 The Author(s)
• First Published: First published in Applied Physics Letters 122(24):243503
• Publisher Policy: Reproduced under a creative commons licence

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
301516		Far-infrared Lasers Assembled using Silicon	Douglas Paul	European Commission (EC)	766719	ENG - Electronics & Nanoscale Engineering