Coughlan, C., Mirza, M.M. , Kirdoda, J. , Dumas, D., Smith, C., McCarthy, C. , Millar, R.W. and Paul, D.J. (2023) Effect of Passivation on Selectively Grown Sub-µm Ge-on-Si Single Photon Avalanche Diode Detectors. In: 2023 IEEE Silicon Photonics Conference (SiPhotonics), Arlington, VA, USA, 04-07 Apr 2023, ISBN 9781665486552 (doi: 10.1109/SiPhotonics55903.2023.10141911)
![[img]](https://eprints.gla.ac.uk/style/images/fileicons/text.png) |
Text
300606.pdf - Accepted Version Available under License Creative Commons Attribution. 2MB |
Abstract
Ge-on-SOI (silicon-on-insulator) single photon avalanche diodes (SPADs) have been fabricated with exposed sidewalls allowing variation of passivation techniques. Reduced dark currents and density of surface states are demonstrated with thermal oxide passivation, demonstrating the benefit of optimal passivation of low aspect ratio selectively grown Ge.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | McCarthy, Charlie and Mirza, Dr Muhammad M A and Paul, Professor Douglas and Millar, Dr Ross and Dumas, Dr Derek and Coughlan, Conor and Kirdoda, Mr Jaroslaw |
| Authors: | Coughlan, C., Mirza, M.M., Kirdoda, J., Dumas, D., Smith, C., McCarthy, C., Millar, R.W., and Paul, D.J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 1949-209X |
| ISBN: | 9781665486552 |
| Copyright Holders: | Copyright © 2023 IEEE |
| First Published: | First published in 2023 IEEE Silicon Photonics Conference (SiPhotonics) |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
University Staff: Request a correction | Enlighten Editors: Update this record
Funder and Project Information
Funder and Project Information