Karami, K. , Dhongde, A., Cheng, H., Reynolds, P. M. , Reddy, B. A., Ritter, D., Li, C. , Wasige, E. and Thoms, S. (2023) Robust sub-100 nm T-Gate fabrication process using multi-step development. Micro and Nano Engineering, 19, 100211. (doi: 10.1016/j.mne.2023.100211)
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Abstract
We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in which each resist is developed separately to optimise the resulting structure. By using a modelling approach and proximity correcting for the full resist stack, we were able to independently vary gate length (50-100 nm) and head size (250-500 nm) at the design stage and fabricate these T-Gates with high yield.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thoms, Dr Stephen and Wasige, Professor Edward and Dhongde, Aniket and CHENG, Huihua and Karami, Mr Kaivan and Li, Professor Chong and Reynolds, Dr Paul |
Authors: | Karami, K., Dhongde, A., Cheng, H., Reynolds, P. M., Reddy, B. A., Ritter, D., Li, C., Wasige, E., and Thoms, S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre |
Journal Name: | Micro and Nano Engineering |
Publisher: | Elsevier |
ISSN: | 2590-0072 |
ISSN (Online): | 2590-0072 |
Published Online: | 29 May 2023 |
Copyright Holders: | Copyright © 2023 The Authors |
First Published: | First published in Micro and Nano Engineering 19: 100211 |
Publisher Policy: | Reproduced under a Creative Commons License |
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