Robust sub-100 nm T-Gate fabrication process using multi-step development

Karami, K. , Dhongde, A., Cheng, H., Reynolds, P. M. , Reddy, B. A., Ritter, D., Li, C. , Wasige, E. and Thoms, S. (2023) Robust sub-100 nm T-Gate fabrication process using multi-step development. Micro and Nano Engineering, 19, 100211. (doi: 10.1016/j.mne.2023.100211)

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Abstract

We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in which each resist is developed separately to optimise the resulting structure. By using a modelling approach and proximity correcting for the full resist stack, we were able to independently vary gate length (50-100 nm) and head size (250-500 nm) at the design stage and fabricate these T-Gates with high yield.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Wasige, Professor Edward and Dhongde, Aniket and CHENG, Huihua and Karami, Mr Kaivan and Li, Professor Chong and Reynolds, Dr Paul
Authors: Karami, K., Dhongde, A., Cheng, H., Reynolds, P. M., Reddy, B. A., Ritter, D., Li, C., Wasige, E., and Thoms, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre
Journal Name:Micro and Nano Engineering
Publisher:Elsevier
ISSN:2590-0072
ISSN (Online):2590-0072
Published Online:29 May 2023
Copyright Holders:Copyright © 2023 The Authors
First Published:First published in Micro and Nano Engineering 19: 100211
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301178Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient OperationEdward WasigeEngineering and Physical Sciences Research Council (EPSRC)EP/R024413/1ENG - Electronics & Nanoscale Engineering