Breakdown of universal mobility curves in sub-100-nm MOSFETs

Kaya, S., Asenov, A. and Roy, S. (2002) Breakdown of universal mobility curves in sub-100-nm MOSFETs. IEEE Transactions on Nanotechnology, 1(4), pp. 260-264. (doi: 10.1109/TNANO.2002.807385)



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We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach. In this approach, carrier trajectories in the bulk are treated via 3-D Brownian dynamics, while the carrier-interface roughness scattering is treated using a novel empirical model.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Roy, Professor Scott
Authors: Kaya, S., Asenov, A., and Roy, S.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:IEEE Transactions on Nanotechnology
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 2002 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Transactions on Nanotechnology 1(4):260-264
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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