Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

Brugnolotto, E., Scherrer, M., Schmid, H., Georgiev, V. and Sousa, M. (2023) Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template. Journal of Crystal Growth, 603, 127015. (doi: 10.1016/j.jcrysgro.2022.127015)

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Abstract

Template assisted selective epitaxy (TASE) offers an attractive monolithic integration route for III-V semiconductors on Si, benefitting from reduced defect density and versatility in its employment to create various electronic and photonic devices. This work achieves compositional and morphological control of lattice matched InGaAs quantum wells embedded in a horizontal InP nanowire grown directly from a Si seed and of the respective heterointerfaces. A series of growth experiments introducing variations of the precursor switching sequence in the growth recipe, and a subsequent scanning transmission electron microscopy and energy dispersive x-ray spectroscopy analysis, were employed to create and characterize a type I superlattice enclosed in a silicon oxide template.

Item Type:Articles
Additional Information:This work is funded by the EU H2020 ITN DESIGN-EID (Grant#860095) and the SNF KSSTP project 188173.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brugnolotto, Enrico and Georgiev, Professor Vihar
Creator Roles:
Brugnolotto, E.Conceptualization, Methodology, Formal analysis, Investigation, Data curation, Writing – original draft, Visualization
Georgiev, V.Writing – review and editing, Supervision, Project administration, Funding acquisition
Authors: Brugnolotto, E., Scherrer, M., Schmid, H., Georgiev, V., and Sousa, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Crystal Growth
Publisher:Elsevier
ISSN:0022-0248
ISSN (Online):1873-5002
Published Online:29 November 2022
Copyright Holders:Copyright © 2022 The Authors
First Published:First published in Journal of Crystal Growth 603: 127015
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
306142Defect Simulation and Material Growth of III-V Nanostructures- European Industrial Doctorate ProgramVihar GeorgievEuropean Commission (EC)860095ENG - Electronics & Nanoscale Engineering