Reliable T-gate Process for THz HEMTs

Cheng, H., Dhongde, A., Karami, K. , Reynolds, P. , Thoms, S. , Wasige, E. and Li, C. (2022) Reliable T-gate Process for THz HEMTs. UK Semiconductors 2022, Sheffield, UK, 6-7 July 2022.

Abstract

No abstract available.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Karami, Mr Kaivan and CHENG, Huihua and Thoms, Dr Stephen and Reynolds, Dr Paul and Wasige, Professor Edward and Li, Professor Chong and Dhongde, Aniket
• Authors: Cheng, H., Dhongde, A., Karami, K., Reynolds, P., Thoms, S., Wasige, E., and Li, C.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre
• Research Group: Microwave and Terahertz Electronics Group
• Copyright Holders: Copyright © 2022 The Author(s)
• Publisher Policy: Reproduced with the permission of the publisher