Impact of Different Types of Planar Defects on Current Transport in Indium Phosphide (InP)

Vedel, C. D., Brugnolotto, E., Smidstrup, S. and Georgiev, V. P. (2021) Impact of Different Types of Planar Defects on Current Transport in Indium Phosphide (InP). In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sep 2021, ISBN 9781665437455 (doi: 10.1109/EuroSOI-ULIS53016.2021.9560698)

Abstract

In this paper we show first-principles simulation results of the three most commonly occurring types of planar defects in Indium Phosphide (InP), which are Rotational Twin Planes (RTPs) and two types of Stacking Faults (SFs). We have found that only the two less common of these defects, the extrinsic and intrinsic SFs, have an impact on the current flow in the semiconductor. These two types of defects cause an increase in the resistivity of the semiconductor and a remarkable decrease in currents for low voltages. The most commonly occurring defect type, RTPs, were revealed to have little to no effect on the electrical properties of the semiconductor.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Georgiev, Professor Vihar and Brugnolotto, Enrico and Vedel, Christian Dam
• Authors: Vedel, C. D., Brugnolotto, E., Smidstrup, S., and Georgiev, V. P.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 2472-9132
• ISBN: 9781665437455
• Copyright Holders: Copyright © 2021 IEEE
• First Published: First published in 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
306142		Defect Simulation and Material Growth of III-V Nanostructures- European Industrial Doctorate Program	Vihar Georgiev	European Commission (EC)	860095	ENG - Electronics & Nanoscale Engineering