Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell

Dutta, T. , Adamu-Lema, F., Nagy, D. , Asenov, A. , Nebesnyi, V., Han, J.-W. and Widjaja, Y. (2021) Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2021), Dallas, TX, USA, 27-29 Sept 2021, pp. 285-288. ISBN 9781665406857 (doi: 10.1109/SISPAD54002.2021.9592536)

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In this work we report the development of a macro-compact model of the one-transistor (1T) bipolar SRAM Cell based on an equivalent circuit representation. The compact model consists of a combination of MOSFET, BJT, and other passive components. We start with calibration of the TCAD deck using experimental data and realize the operation of the 1T SRAM cell. Then we calibrate the different components of the SPICE compact model using TCAD simulation results at the 28 nm technology node. Finally, we show a comparison of the full switching sequence obtained from TCAD and SPICE simulations demonstrating the validity of the compact model.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Dutta, Dr Tapas and Nagy, Dr Daniel and Adamu-Lema, Dr Fikru and Asenov, Professor Asen
Authors: Dutta, T., Adamu-Lema, F., Nagy, D., Asenov, A., Nebesnyi, V., Han, J.-W., and Widjaja, Y.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Published Online:13 November 2021
Copyright Holders:Copyright © 2021 IEEE
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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