Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)
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Abstract
This brief presents AlGaN/GaN high electron mobility transistor (HEMT) devices with improved thermal and dc current-voltage (I-V) performance using a novel method of obtaining a distributed channel device, i.e., the total semiconductor area between the ohmic contacts comprise conducting and nonconducting regions. A novel oxygen (O2) plasma treatment technique is used to realize the inactive or nonconducting regions. Multifinger devices with 1-mm gate periphery exhibit extremely low gate leakage currents below 0.2 μA/mm at a gate voltage of -20 V and an increase in the saturated output current by 14% at 20-V drain voltage. Moreover, performed dc I-V measurements at various ambient temperatures show that the proposed method not only increases the saturated output currents by over 10% for 1 × 100 μm 2 gate devices but also significantly reduces their knee walkout voltage from 6 to 3 V at 300 K. These results show that this device design approach can exploit further the potential of the GaN material system for transistor applications.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward and Elksne, Mrs Maira and Al-Khalidi, Dr Abdullah |
| Authors: | Elksne, M., Al-Khalidi, A., and Wasige, E. |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | IEEE |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Published Online: | 03 April 2019 |
| Copyright Holders: | Copyright © 2019 IEEE |
| First Published: | First published in IEEE Transactions on Electron Devices 66(5): 2454-2458 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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