Aldegunde, M., Martinez, A., and Barker, J.R. (2012) Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations. IEEE Electron Device Letters, 33 (2). pp. 194-196. ISSN 0741-3106 (doi:10.1109/LED.2011.2177634)
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Publisher's URL: http://dx.doi.org/10.1109/LED.2011.2177634
The impact of discrete doping in junctionless gate-all-around n-type silicon nanowire transistors is studied using 3-D nonequilibrium Green's functions simulations. The studied devices have a 20 nm long gate and cross sections of 4.2 x 4.2 and 6.2 x 6.2 nm(2). The average doping concentration is 1020 cm(-3). The dopant distributions are randomly generated and modeled in a fully atomistic way. Phonon scattering, elastic and inelastic, is also included in the simulations. We show that junctionless nanowire transistors have a much higher subthreshold variability than their inversion mode counterparts for the equivalent geometry and doping level.
|Glasgow Author(s):||Barker, Prof John and Martinez, Dr Antonio|
|Authors:||Aldegunde, M., Martinez, A., and Barker, J.R.|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Journal Name:||IEEE Electron Device Letters|