Martinez, A., Price, A., Valin, R., Aldegunde, M. and Barker, J. (2016) Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective. Journal of Computational Electronics, 15(4), pp. 1130-1147. (doi: 10.1007/s10825-016-0851-0)

Valin, R., Aldegunde, M., Martinez, A. and Barker, J.R. (2014) Quantum transport of a nanowire field-effect transistor with complex phonon self–energy. Journal of Applied Physics, 116(8), 084507. (doi: 10.1063/1.4894066)

Aldegunde, M., Martinez, A. and Barker, J.R. (2012) Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations. IEEE Electron Device Letters, 33(2), pp. 194-196. (doi: 10.1109/LED.2011.2177634)

Aldegunde, M., Martinez, A. and Asenov, A. (2011) Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors. Journal of Applied Physics, 110(9), 094518. (doi: 10.1063/1.3658856)

Martinez, A., Aldegunde, M., Seoane, N., Brown, A.R., Barker, J.R. and Asenov, A. (2011) Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors. IEEE Transactions on Electron Devices, 58(8), pp. 2209-2217. (doi: 10.1109/TED.2011.2157929)