Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models

Kovac, U., Alexander, C., Roy, G., Riddet, C., Cheng, B.J. and Asenov, A. (2010) Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models. IEEE Transactions on Electron Devices, 57(10), pp. 2418-2426. (doi: 10.1109/TED.2010.2062517)

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Publisher's URL: http://dx.doi.org/10.1109/TED.2010.2062517

Abstract

Quantum corrections based on density gradient formalism, recently introduced in the 3-D Monte Carlo (MC) module of the Glasgow "atomistic" simulator, are used to simultaneously capture quantum confinement effects as well as "ab initio" ionized impurity scattering. This has allowed us to consistently study the impact of transport variability due to scattering from random discrete dopants on the on-current variability in realistic nano-CMOS transistors. Such simulations result in an increased drain current variability when compared with the drift diffusion (DD) simulation. For the first time, a method that is used to accurately transfer the increased on-current variability obtained from the "ab initio" MC simulations to the DD simulations is subsequently presented. The MC-corrected DD simulations are used to produce the target I-V characteristics from which the statistical compact models are extracted for use in preliminary design kits at the early stage of new technology development.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Asenov, Professor Asen and Riddet, Mr Craig and Alexander, Dr Craig and Cheng, Dr Binjie
Authors: Kovac, U., Alexander, C., Roy, G., Riddet, C., Cheng, B.J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:20 September 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
443791Atomic scale simulation of nanoelectronic devicesAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E038344/1Electronic and Nanoscale Engineering
421321Meeting the design challenges of the nano CMOS electronicsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E003125/1ENG - ENGINEERING ELECTRONICS & NANO ENG