Browse by Research Project Code

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0

Markov, S., Cheng, B. and Asenov, A. (2012) Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions. IEEE Electron Device Letters, 33(3), pp. 315-317. (doi: 10.1109/LED.2011.2179114)

Markov, S., Wang, X., Moezi, N. and Asenov, A. (2011) Drain current collapse in nanoscaled bulk MOSFETs due to random dopant compensation in the source/drain extensions. IEEE Transactions on Electron Devices, 58(8), pp. 2385-2393. (doi: 10.1109/TED.2011.2152845)

Wang, X., Roy, S., Brown, A.R. and Asenov, A. (2011) Impact of STI on statistical variability and reliability of decananometer MOSFETs. IEEE Electron Device Letters, 32(4), pp. 479-481. (doi: 10.1109/LED.2011.2108256)

Kovac, U., Alexander, C., Roy, G., Riddet, C., Cheng, B.J. and Asenov, A. (2010) Hierarchical Simulation of Statistical Variability: From 3-D MC With "ab initio" Ionized Impurity Scattering to Statistical Compact Models. IEEE Transactions on Electron Devices, 57(10), pp. 2418-2426. (doi: 10.1109/TED.2010.2062517)

Azam, T., Cheng, B., Roy, S. and Cumming, D.R.S. (2010) Robust asymmetric 6T-SRAM cell for low-power operation in nano-CMOS technologies. Electronics Letters, 46(4), pp. 273-274. (doi: 10.1049/el.2010.2817)

Cheng, B.J., Dideban, D., Moezi, N., Millar, C., Roy, G., Wang, X., Roy, S. and Asenov, A. (2010) Statistical-variability compact-modeling strategies for BSIM4 and PSP. IEEE Design and Test of Computers, 27(2), pp. 26-35. (doi: 10.1109/MDT.2010.53)

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2009) Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study. IEEE Transactions on Electron Devices, 56(10), pp. 2255-2263. (doi: 10.1109/TED.2009.2027973)

Alexander, C., Roy, G. and Asenov, A. (2008) Random-dopant-induced drain current variation in Nano-MOSFETs: a three-dimensional self-consistent Monte Carlo simulation study using "ab initio" ionized impurity scattering. IEEE Transactions on Electron Devices, 55(11), pp. 3251-3258. (doi: 10.1109/TED.2008.2004647)

Asenov, A. , Cathignol, A., Cheng, B., McKenna, K. P., Brown, A. R., Shluger, A. L., Chanemougame, D., Rochereau, K. and Ghibaudo, G. (2008) Origin of the asymmetry in the magnitude of the statistical variability of n- and p-channel poly-Si gate bulk MOSFETs. IEEE Electron Device Letters, 29(8), pp. 913-915. (doi: 10.1109/LED.2008.2000843)

This list was generated on Wed Mar 27 14:59:35 2024 GMT.