Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design

McKenzie, A. F. et al. (2021) Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design. Applied Physics Letters, 118(2), 021109. (doi: 10.1063/5.0035038)

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Abstract

We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase the void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.

Item Type:Articles
Additional Information:This work was supported by the Engineering and Physical Sciences Research Council (Grant No. EP/S023321/1). A.F.M. is grateful for support from CST Global Ltd. through an Industrial Fellowship from the Royal Commission for the Exhibition of 1851.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:King, Ben and Orchard, Dr Jon and Childs, Dr David and Hogg, Professor Richard and Thoms, Dr Stephen and Rae, Dr Katherine and Taylor, Dr Richard and McKenzie, Adam and Gerrard, Dr Neil and MacLaren, Dr Donald
Authors: McKenzie, A. F., King, B.C., Rae, K.J., Thoms, S.J., Gerrard, N.D., Orchard, J.R., Nishi, K.,, Takemasa, K.,, Sugawara, M., Taylor, R.J.E., Childs, D.T.D., MacLaren, D.A., and Hogg, R.A.
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:13 January 2021
Copyright Holders:Copyright © 2021 The Authors
First Published:First published in Applied Physics Letters 118(2):021109
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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