Sadi, T., Wang, L. and Asenov, A. (2016) Advanced Simulation of Resistance Switching in Si-rich Silica RRAM Devices. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 Jun 2016. ISBN 9781509007264 (doi: 10.1109/SNW.2016.7578049)
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Abstract
We use an experimentally-validated advanced three-dimensional physical simulator to investigate switching in SiOx resistive random-access memory (RRAM) devices. We show how the simulator is useful for exploring the little-known physics of these promising devices, and demonstrate that switching is an intrinsic property of the SiOx layer. The simulator is useful in providing efficient RRAM device and circuit designs, in terms of performance, variability and reliability.
| Item Type: | Conference or Workshop Item |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Wang, Dr Liping and Sadi, Dr Toufik |
| Authors: | Sadi, T., Wang, L., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISBN: | 9781509007264 |
| Published Online: | 29 September 2016 |
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