Sadi, T., Mehonic, A., Montesi, L., Buckwell, M., Kenyon, A. and Asenov, A. (2018) Investigation of resistance switching in SiOx RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator. Journal of Physics: Condensed Matter, 30(8), 084005. (doi: 10.1088/1361-648X/aaa7c1) (PMID:29334362)

Sadi, T., Wang, L. and Asenov, A. (2017) Multi-Scale Electrothermal Simulation and Modelling of Resistive Random Access Memory Devices. In: 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS 2016), Bremen, Germany, 21-23 Sept 2016, pp. 33-37. ISBN 9781509007332 (doi: 10.1109/PATMOS.2016.7833422)

Sadi, T., Wang, L. and Asenov, A. (2016) Advanced Simulation of Resistance Switching in Si-rich Silica RRAM Devices. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 Jun 2016. ISBN 9781509007264 (doi: 10.1109/SNW.2016.7578049)

Sadi, T., Wang, L., Gao, D., Mehonic, A., Montesi, L., Buckwell, M., Kenyon, A., Shluger, A. and Asenov, A. (2016) Advanced physical modeling of SiOx resistive random access memories. In: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 06-08 Sep 2016, pp. 149-152. ISBN 9781509008186 (doi: 10.1109/SISPAD.2016.7605169)

Sadi, T., Wang, L., Gerrer, L., Georgiev, V. and Asenov, A. (2015) Self-consistent physical modeling of SiOx-based RRAM structures. In: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sep 2015, pp. 1-4. ISBN 978069251523515 (doi: 10.1109/IWCE.2015.7301981)

Sadi, T., Wang, L., Gerrer, L. and Asenov, A. (2015) Physical Simulation of Si-Based Resistive Random-Access Memory Devices. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, USA, 9-11 Sep 2015, pp. 385-388. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292340)