Sadi, T., Wang, L., Gao, D., Mehonic, A., Montesi, L., Buckwell, M., Kenyon, A., Shluger, A. and Asenov, A. (2016) Advanced physical modeling of SiOx resistive random access memories. In: International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, Germany, 06-08 Sep 2016, pp. 149-152. ISBN 9781509008186 (doi: 10.1109/SISPAD.2016.7605169)
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Abstract
We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects and the initial vacancy distributions on switching. We also highlight the necessity of using 3D physical modelling to predict correctly the switching behavior. The simulation framework is useful for exploring the little-known physics of SiOx RRAMs and RRAM devices in general. This proves useful in achieving efficient device and circuit designs, in terms of performance, variability and reliability.
| Item Type: | Conference Proceedings |
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| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Wang, Dr Liping and Sadi, Dr Toufik |
| Authors: | Sadi, T., Wang, L., Gao, D., Mehonic, A., Montesi, L., Buckwell, M., Kenyon, A., Shluger, A., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISBN: | 9781509008186 |
| Copyright Holders: | Copyright © 2016 IEEE |
| First Published: | First published in Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices: 149-152 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
| Related URLs: |
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