Browse by Research Project Code
Up a level |
Carrillo-Nunez, H., Dimitrova, N., Asenov, A. and Georgiev, V. (2019) Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors. IEEE Electron Device Letters, 40(9), pp. 1366-1369. (doi: 10.1109/LED.2019.2931839)
Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A. and Georgiev, V. P. (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39(9), pp. 1473-1476. (doi: 10.1109/LED.2018.2859586)
Carrillo-Nuñez, H., Mirza, M. M. , Paul, D. J. , MacLaren, D. A. , Asenov, A. and Georgiev, V. P. (2018) Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors. IEEE Transactions on Electron Devices, 65(5), pp. 1692-1698. (doi: 10.1109/TED.2018.2817919)
Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi: 10.1109/JEDS.2017.2752465)