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Chan, K.H., Benbakhti, B., Riddet, C., Watling, J. and Asenov, A. (2011) Simulation study of the 20nm gate-length implant-free quantum well p-MOSFET. Microelectronic Engineering, 88(4), pp. 362-365. (doi: 10.1016/j.mee.2010.09.025)
Watling, J.R., Riddet, C., Chan, K.H. and Asenov, A. (2011) Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering, 88(4), pp. 462-464. (doi: 10.1016/j.mee.2010.11.017)
Riddet, C., Alexander, C., Brown, A., Roy, S. and Asenov, A. (2011) Simulation of "ab initio" quantum confinement scattering in UTB MOSFETs using three-dimensional ensemble Monte Carlo. IEEE Transactions on Electron Devices, 58(3), pp. 600-608. (doi: 10.1109/TED.2010.2095422)
Riddet, C., Brown, A. R., Roy, S. and Asenov, A. (2008) Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations. Journal of Computational Electronics, 7(3), pp. 231-235. (doi: 10.1007/s10825-008-0222-6)