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Asenov, A. , Cathignol, A., Cheng, B., McKenna, K. P., Brown, A. R., Shluger, A. L., Chanemougame, D., Rochereau, K. and Ghibaudo, G. (2008) Origin of the asymmetry in the magnitude of the statistical variability of n- and p-channel poly-Si gate bulk MOSFETs. IEEE Electron Device Letters, 29(8), pp. 913-915. (doi: 10.1109/LED.2008.2000843)
Markov, S., Sushko, P.V., Roy, S., Fiegna, C., Sangiorgi, E., Shluger, A.L. and Asenov, A. (2008) Si-Sio(2) interface band-gap transition - effects on MOS inversion layer. Physica Status Solidi A: Applications and Materials Science, 205(6), pp. 1290-1295. (doi: 10.1002/pssa.200778154)
Brown, A.R., Roy, G. and Asenov, A. (2007) Poly-Si-gate-related variability in decananometer MOSFETs with conventional architecture. IEEE Transactions on Electron Devices, 54(11), pp. 3056-3063. (doi: 10.1109/TED.2007.907802)
Martinez, A., Bescond, M., Barker, J.R., Svizhenko, A., Anantram, M.P., Millar, C. and Asenov, A. (2007) A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs. IEEE Transactions on Electron Devices, 54(9), pp. 2213-2222. (doi: 10.1109/TED.2007.902867)
Martinez, A., Barker, J.R., Svizhenko, A., Anantram, A. and Asenov, A. (2006) The impact of random dopant aggregation in source and drain in the performance of ballistic DG nano-MOSFETs. In: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, p. 133.