Maricar, M. I., Khalid, A. , Dunn, G., Cumming, D. and Oxley, C.H. (2015) Experimentally estimated dead space for GaAs and InP based planar Gunn diodes. Semiconductor Science and Technology, 30(1), 012001. (doi: 10.1088/0268-1242/30/1/012001)
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Publisher's URL: http://dx.doi.org/10.1088/0268-1242/30/1/012001
Abstract
An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s−1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s−1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Dunn, Dr Geoffrey and Khalid, Dr Ata-Ul-Habib |
Authors: | Maricar, M. I., Khalid, A., Dunn, G., Cumming, D., and Oxley, C.H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Semiconductor Science and Technology |
Publisher: | IOP Publishing |
ISSN: | 0268-1242 |
ISSN (Online): | 1361-6641 |
Copyright Holders: | Copyright © 2015 IOP Publishing |
First Published: | First published in Semiconductor Science and Technology 30(1):012001 |
Publisher Policy: | Reproduced under a Creative Commons License |
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