Competing strain relaxation mechanisms in epitaxially grown Pr0.48Ca0.52MnO3 on SrTiO3

Herpers, A., O'Shea, K. J., MacLaren, D. A. , Noyong, M., Rösgen, B., Simon, U. and Dittmann, R. (2014) Competing strain relaxation mechanisms in epitaxially grown Pr0.48Ca0.52MnO3 on SrTiO3. APL Materials, 2(10), p. 106106. (doi: 10.1063/1.4900817)

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We investigated the impact of strain relaxation on the current transport of Pr<sub>0.48</sub>Ca<sub>0.52</sub>MnO<sub>3</sub>(PCMO) thin films grown epitaxially on SrTiO3 single crystals by pulsed laser deposition. The incorporation of misfit dislocations and the formation of cracks are identified as competing mechanisms for the relaxation of the biaxial tensile strain. Crack formation leads to a higher crystal quality within the domains but the cracks disable the macroscopic charge transportthrough the PCMO layer. Progressive strain relaxation by the incorporation of misfit dislocations,on the other hand, results in a significant decrease of the activation energy for polaron hoppingwith increasing film thickness.

Item Type:Articles
Glasgow Author(s) Enlighten ID:MacLaren, Professor Donald and O'Shea, Miss Kerry
Authors: Herpers, A., O'Shea, K. J., MacLaren, D. A., Noyong, M., Rösgen, B., Simon, U., and Dittmann, R.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:APL Materials
Copyright Holders:Copyright © 2014 The Authors
First Published:First published in APL Materials 2(10):106106
Publisher Policy:Reproduced under a Creative Commons License
Data DOI:10.5525/gla.researchdata.208

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
530721Integrating advanced nanomaterials into transformative technologiesDonald MaclarenEngineering & Physical Sciences Research Council (EPSRC)EP/I00419X/1P&A - PHYSICS & ASTRONOMY