1.3-μm InAs quantum dot vertical cavity surface emitting lasers with planar electrode configuration

Ding, Y. et al. (2008) 1.3-μm InAs quantum dot vertical cavity surface emitting lasers with planar electrode configuration. In: 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, Beijing, China, 16-19 Nov 2008, p. 715807. (doi: 10.1117/12.810970)

Abstract

We present the 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar electrodes configuration. The lasing wavelength is around 1274 nm. The lowest threshold current of wafer level device is ~1 mA, which corresponds to a low threshold current density of ~1.3 kA/cm2 or 76 A/cm2 per QD layer. The maximum output power of 1 mW can be obtained at room temperature. High temperature stability can be seen in temperature dependence L-I characteristics of InAs QD VCSEL 3-dB modulation frequency response of 1.7 GHz can be obtained in the small signal response measurements.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Ding, Dr Ying
• Authors: Ding, Y., Fan, W.J., Xu, D.W., Tong, C.Z., Loke, W.K., Yoon, S.F., Zhang, D.H., Liu, Y., Zhu, N.H., Zhao, L.J., and Wang, W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 0277786X