Fabrication and characterization of 1.3-μm InAs quantum-dot VCSELs and monolithic VCSEL arrays

Ding, Y., Fan, W.J., Xu, D.W., Zhao, L.J., Liu, Y. and Zhu, N.H. (2009) Fabrication and characterization of 1.3-μm InAs quantum-dot VCSELs and monolithic VCSEL arrays. In: 2009 Asia Communications and Photonics Conference and Exhibition (ACP 2009), Shanghai, China, 2-6 Nov 2009, (doi: 10.1117/12.852114)

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Publisher's URL: http://dx.doi.org/10.1117/12.852114

Abstract

We present fabrication and characterization of 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) and QD-VCSEL arrays. The continuous-wave (CW) output power of single QD-VCSEL of 1.2 mW with lasing wavelength of 1.28 μm is obtained at room temperature (RT) at a bias current of 15 mA without power saturation. The low threshold current of 1.1 mA can be achieved for the single mode device. We investigate the 3-dB modulation bandwidth of QD-VCSELs with oxide aperture size of 5-μm, 10-μm and 15-μm in the small signal frequency response measurements. Modulation bandwidth of 2.65 GHz is achieved for single-mode QD-VCSEL with oxide aperture size of 5 μm at a bias current of 4.5 mA. The maximum modulation bandwidth of 2.5 GHz can be obtained for multimode QD-VCSEL with oxide aperture size of 10 μm at a bias current of 7 mA. The 61 QD-VCSELs array is also investigated at RT without optimization. Maximum CW output power of 28 mW and pulsed output power of 18 mW are demonstrated for 2-D QD-VCSEL array with threshold current of 50 mA. The far field pattern beam angle of QD-VCSEL arrays at two perpendicular directions are about 18 degree.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Ding, Y., Fan, W.J., Xu, D.W., Zhao, L.J., Liu, Y., and Zhu, N.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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