Ultrafast InAs/GaAs quantum-dot laser diodes: unlocking spectral and temporal versatility

Cataluna, M. A., Ding, Y., Nikitichev, D., Fedorova, K. and Rafailov, E. (2011) Ultrafast InAs/GaAs quantum-dot laser diodes: unlocking spectral and temporal versatility. In: E-MRS ICAM IUMRS 2011 Spring Meeting, Nice, France, 9-13 May 2011,

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Publisher's URL: http://www.emrs-strasbourg.com/files/USB%2011/symposium_g.pdf?PHPSESSID=bb480bc1e52f9ed6fd3dab6c5bbb2438

Abstract

Semiconductor quantum dots offer major advantages in ultrafast science and technology, due to the possibility of combining exploitable spectral broadening of both gain and absorption with ultrafast carrier dynamic properties. This talk will cover our recent progress on ultrafast InAs/GaAs quantum-dot edge-emitting lasers, particularly highlighting how the unique properties of quantum-dot materials can be exploited in novel mode-locking regimes with spectral and temporal versatility. Spectral versatility is demonstrated through broadband tunability and novel mode-locking regimes which involve distinct and widely-separated spectral bands, such as robust, high-power wavelength bistability and dual-wavelength mode locking. Broad tunability of the pulse repetition rate is also demonstrated for an external cavity mode-locked quantum-dot laser. High-energy and low noise pulse generation are demonstrated for low pulse repetition rates. These recent advances confirm the potential of quantum-dot lasers as versatile, compact and low-cost sources of ultrashort pulses.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Cataluna, M. A., Ding, Y., Nikitichev, D., Fedorova, K., and Rafailov, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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