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Power characteristics of 1.3-μm InAs quantum-dot vertical cavity surface emitting lasers fabricated by the dielectric-free approach

Yoon, S.F., Xu, D.W., Ding, Y., Tong, C.Z. and Fan, W.J. (2012) Power characteristics of 1.3-μm InAs quantum-dot vertical cavity surface emitting lasers fabricated by the dielectric-free approach. In: IEEE International Conference on Electron Devices and Solid State Circuits, Bangkok, Thailand, 3-5 Dec 2012,

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Publisher's URL: http://www.edssc2012.com/

Abstract

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Yoon, S.F., Xu, D.W., Ding, Y., Tong, C.Z., and Fan, W.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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