760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

Wang, H., Kong, L., Bajek, D., Haggett, S., Wang, X., Cui, B., Pan, J., Ding, Y. and Cataluna, M. A. (2013) 760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation. In: CLEO: Science and Innovations, San Jose, CA, USA, 9-14 Jun 2013, JTh2A.20. (doi: 10.1364/CLEO_QELS.2013.JTh2A.20)

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Publisher's URL: http://dx.doi.org/10.1364/CLEO_QELS.2013.JTh2A.20

Abstract

We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4 GHz pulse train with a pulse duration of ~5 ps.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Wang, H., Kong, L., Bajek, D., Haggett, S., Wang, X., Cui, B., Pan, J., Ding, Y., and Cataluna, M. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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