Unselective regrowth of 1.5-μm InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers

Feng, W., Ding, Y., Pan, J.Q., Zhao, L.J., Zhu, H.L. and Wang, W. (2006) Unselective regrowth of 1.5-μm InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers. Optical Engineering, 45(9), 090501. (doi: 10.1117/1.2355658)

Abstract

Unselective regrowth for fabricating 1.5-μm InGaAsP multiple-quantum well (MQW) distributed-feedback (DFB) buried heterostructure (BH) lasers is developed. The experimental results exhibit superior characteristics, such as a low threshold of 8.5mA, high slope efficiency of 0.55mW∕mA, circular-like far-field patterns, the narrow linewidth of 2.5MHz, etc. The high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Ding, Dr Ying
• Authors: Feng, W., Ding, Y., Pan, J.Q., Zhao, L.J., Zhu, H.L., and Wang, W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Optical Engineering
• Publisher: SPIE
• ISSN: 0091-3286
• ISSN (Online): 1560-2303
• Copyright Holders: Copyright © 2006 SPIE
• First Published: First published in Optical Engineering 45(9):090501
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher