Fabrication and modulation characteristics of 1.3 µm p-doped InAs quantum dot vertical cavity surface emitting lasers

Ding, Y., Fan, W.J., Xu, D.W., Tong, C.Z., Yoon, S.F., Zhang, D.H., Zhao, L.J., Wang, W., Liu, Y. and Zhu, N.H. (2009) Fabrication and modulation characteristics of 1.3 µm p-doped InAs quantum dot vertical cavity surface emitting lasers. Journal of Physics D: Applied Physics, 42(8), 085117. (doi: 10.1088/0022-3727/42/8/085117)

Abstract

We present the fabrication of 1.3 µm waveband p-doped InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with an extremely simple process. The continuous-wave saturated output power of 1.1 mW with a lasing wavelength of 1280 nm is obtained at room temperature. The high-speed modulation characteristics of p-doped QD VCSELs of two different oxide aperture sizes are investigated and compared. The maximum 3 dB modulation bandwidth of 2.5 GHz can be achieved at a bias current of 7 mA for a p-doped QD VCSEL with an oxide aperture size of 10 µm in the small signal frequency response measurements. The crucial factors for the 3 dB bandwidth limitation are discussed according to the parameters' extraction from frequency response.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Ding, Dr Ying
• Authors: Ding, Y., Fan, W.J., Xu, D.W., Tong, C.Z., Yoon, S.F., Zhang, D.H., Zhao, L.J., Wang, W., Liu, Y., and Zhu, N.H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Physics D: Applied Physics
• Publisher: IOP Publishing
• ISSN: 0022-3727
• ISSN (Online): 1361-6463