Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure

Ding, Y., Fan, W.J., Ma, B.S., Xu, D.W., Yoon, S.F., Liang, S., Zhao, L.J., Wasiak, M., Czyszanowski, T. and Nakwaski, W. (2010) Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure. Journal of Applied Physics, 108(7), 073111. (doi: 10.1063/1.3490236)

Abstract

Microphotoluminescence(μ-PL) investigation has been performed at room temperature on InAsquantum dot(QD)vertical cavity surface emitting laser(VCSEL) structure in order to characterize the QDepitaxial structure which was designed for 1.3 μm wave band emission. Actual and precise QDemission spectra including distinct ground state (GS) and excited state (ES) transition peaks are obtained by an edge-excitation and edge-emission (EEEE) μ-PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE μ-PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxialgrowth according to EEEE μ-PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Ding, Dr Ying
• Authors: Ding, Y., Fan, W.J., Ma, B.S., Xu, D.W., Yoon, S.F., Liang, S., Zhao, L.J., Wasiak, M., Czyszanowski, T., and Nakwaski, W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Applied Physics
• Publisher: American Institute of Physics
• ISSN: 0021-8979
• ISSN (Online): 1089-7550