Multilayered Ge/SiGe material in microfabricated thermoelectric modules

Samarelli, A. et al. (2014) Multilayered Ge/SiGe material in microfabricated thermoelectric modules. Journal of Electronic Materials, 43(10), pp. 3838-3843. (doi: 10.1007/s11664-014-3233-z)

Abstract

Results for low dimensional p-type Ge/SiGe superlattices with Ge quantum wells of 3.43 nm are presented. A range of microfabricated test structures have been developed to characterise the cross-plane electrical and thermal properties of the Ge/SiGe heterostructures. These superlattices were directly grown on 100-mm-diameter silicon wafers by a chemical vapour deposition growth system with rates up to 6 nm/s. Quantum well and quantum mechanical tunnel barriers with dimensions down to ∼1nm have been designed, grown and tested; they demonstrate a ZT of 0.08 ± 0.011 and power factor of 1.34 ± 0.15 m W m−1 K−2 at 300 K. A complete microfabricated module using indium bump-bonding is reported together with preliminary results on unoptimised material and leg dimensions. Routes to optimise the material and modules are discussed.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Weaver, Professor Jonathan and Ferre Llin, Dr Lourdes and Dobson, Dr Phil and Samarelli, Mr Antonio and Paul, Professor Douglas
• Authors: Samarelli, A., Ferre Llin, L., Cecchi, S., Chrastina, D., Isella, G., Etzelstorfer, T., Stangl, J., Gubler, E. M., Weaver, J.M.R., Dobson, P., and Paul, D.J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Electronic Materials
• Publisher: Springer US
• ISSN: 0361-5235
• ISSN (Online): 1543-186X