Multilayered Ge/SiGe material in microfabricated thermoelectric modules

Samarelli, A. et al. (2014) Multilayered Ge/SiGe material in microfabricated thermoelectric modules. Journal of Electronic Materials, 43(10), pp. 3838-3843. (doi: 10.1007/s11664-014-3233-z)

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Results for low dimensional p-type Ge/SiGe superlattices with Ge quantum wells of 3.43 nm are presented. A range of microfabricated test structures have been developed to characterise the cross-plane electrical and thermal properties of the Ge/SiGe heterostructures. These superlattices were directly grown on 100-mm-diameter silicon wafers by a chemical vapour deposition growth system with rates up to 6 nm/s. Quantum well and quantum mechanical tunnel barriers with dimensions down to ∼1nm have been designed, grown and tested; they demonstrate a ZT of 0.08 ± 0.011 and power factor of 1.34 ± 0.15 m W m−1 K−2 at 300 K. A complete microfabricated module using indium bump-bonding is reported together with preliminary results on unoptimised material and leg dimensions. Routes to optimise the material and modules are discussed.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Weaver, Professor Jonathan and Ferre Llin, Dr Lourdes and Dobson, Dr Phil and Samarelli, Mr Antonio and Paul, Professor Douglas
Authors: Samarelli, A., Ferre Llin, L., Cecchi, S., Chrastina, D., Isella, G., Etzelstorfer, T., Stangl, J., Gubler, E. M., Weaver, J.M.R., Dobson, P., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Electronic Materials
Publisher:Springer US
ISSN (Online):1543-186X

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