Dumas, D. C. S., Gallacher, K. , Rhead, S., Myronov, M., Leadley, D. R. and Paul, D. J. (2014) Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at lambda = 1550 nm. Optics Express, 22(16), pp. 19284-19292. (doi: 10.1364/OE.22.019284)
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Abstract
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin |
| Authors: | Dumas, D. C. S., Gallacher, K., Rhead, S., Myronov, M., Leadley, D. R., and Paul, D. J. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Semiconductor Devices |
| Journal Name: | Optics Express |
| Publisher: | Optical Society of America |
| ISSN: | 1094-4087 |
| ISSN (Online): | 1094-4087 |
| Copyright Holders: | Copyright © 2014 0SA |
| First Published: | First published in Optics Express 22(16):19284-19292 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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