A low damage etching process of sub-100 nm platinum gate line for III-V MOSFET fabrication and the optical emission spectrometry of the inductively coupled plasma of SF₆/C₄F₈

Li, X. , Zhou, H., Hill, R. J.W., Holland, M. and Thayne, I. G. (2011) A low damage etching process of sub-100 nm platinum gate line for III-V MOSFET fabrication and the optical emission spectrometry of the inductively coupled plasma of SF₆/C₄F₈. In: ISPlasma 2011: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Nagoya, Japan, 6-9 March 2011,

Abstract

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• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Zhou, Dr Haiping and Thayne, Prof Iain and Hill, Mr Richard and Li, Dr Xu and Holland, Dr Martin
• Authors: Li, X., Zhou, H., Hill, R. J.W., Holland, M., and Thayne, I. G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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