106-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure

Wang, H., Mi, J., Zhou, X., Meriggi, L., Steer, M., Cui, B., Chen, W., Pan, J. and Ding, Y. (2013) 106-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure. Optics Letters, 38(22), pp. 4868-4871. (doi: 10.1364/OL.38.004868)

Abstract

InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 μm with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current–voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 μm at a bias current of 80 mA at 25°C.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Steer, Dr Matthew and Ding, Dr Ying
• Authors: Wang, H., Mi, J., Zhou, X., Meriggi, L., Steer, M., Cui, B., Chen, W., Pan, J., and Ding, Y.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Optics Letters
• Publisher: Optical Society of America
• ISSN: 0146-9592
• ISSN (Online): 1539-4794